A nonlinear global model of single frequency capacitively. Capacitively coupled hydrogen plasmas sustained by. Effect of electromagnetic waves and higher harmonics in capacitively coupled plasma phenomena view the table of contents for this issue, or go to the journal homepage for more. The underlying physics of a capacitively coupled plasma is rather complicated, even for rather simple geometric configurations and plasma chemistries. Modeling of dual frequency capacitively coupled plasma. Simulation of main plasma parameters of a cylindrical. Journal of micronanolithography, mems, and moems doublesided micromachining process for silicon cantilever using a parallel capacitively coupled plasma. Plasma parameters and the subsonic flow from a capacitively coupled, cylindrical plasma source of the njord helicon device are investigated by means of a mach probe and a retarding field energy analyzer rfea. Thus, they are categorized as edischarge in comparison with hdischarge inductively coupled discharge. Capacitively coupled plasma how is capacitively coupled. Control of electron energy distributions and plasma. An inductively coupled plasma icp or transformer coupled plasma tcp is a type of plasma source in which the energy is supplied by electric currents which are produced by electromagnetic induction, that is, by timevarying magnetic fields.
Plasma etching and deposition of thin films are critical processes in the manufacture of advanced microelectronic devices. Rossnagel in analysis of arearatio effect for radiofrequency diode, j. Kinetic simulation of capacitively coupled plasmas driven by. Experimental investigation of a low pressure capacitively coupled discharge a thesis for the degree of philosophiae doctor presented to dublin city university. Pdf trench and hole patterning with euv resists using. Dual frequency capacitively coupled plasma dfccp tools for etching and deposition for microelectronics fabrication typically use a high frequency hf, tens to hundreds of mhz to sustain the plasma and a low frequency lf, a few to 10mhz for ion acceleration into the wafer.
Kinetic simulation of capacitively coupled plasmas driven by trapezoidal asymmetric voltage pulses paola diomedea and demetre j. Effect of electromagnetic waves and higher harmonics in. Thus, they are categorized as edischarge in comparison with hdischarge. Figure 31 shows the common components of an icpaes system from the late 1980s to the 1990s. Capacitively coupled discharge works similarly as dc glow discharge. Nanomaterials free fulltext capacitively coupled plasma. A defined parallelplate radiofrequency system for experimental and theoretical studies of plasma processing discharges. This is likely to be due to relatively high ion energy impacts on the growing film and low plasma densities. Us7504006b2 selfionized and capacitivelycoupled plasma.
A capacitively coupled plasma ccp is one of the most common types of industrial plasma sources. Control of dual frequency capacitively coupled plasma via blocking capacitor and phase angle. Economoub plasma processing laboratory, department of chemical and biomolecular engineering. With a high fluorescence intensity, the cdots obtained from the o2ccp radiation of a 1ethyl3methylimidazolium dicyanamide ionic liquid solution of citric acid were characterized with an average diameter of 8. Of background interest is an rf diode which uses a capacitively coupled rf energy and in which a plasma is developed as discussed by h. Before and after rf plasma cleaning, the mirror was characterized by raman spectroscopy, soft x. Capacitively coupled discharge plasma pie scientific. Comparison of plasma parameters in ccp and icp processes appropriate for carbon nanotube growth. Simulation of main plasma parameters of a cylindrical asymmetric capacitively coupled plasma microthruster using computational. Journal of micronanolithography, mems, and moems spie. Plasma presentation plasma physics physical universe.
May 01, 20 when capacitively coupled plasma ccp is used to generate largearea plasma, the standing wave effect becomes significant, which results in the hindering of the uniform plasma process such as in a plasma etcher or plasma chemical vapor deposition. Following requirements of the plasma processing industry for increasing throughput, capacitively coupled plasma reactors with large area electrodes driven by very high frequency sources have been. These properties make it a popular configuration for a variety of plasma processing techniques 2. Us5274306a capacitively coupled radiofrequency plasma. In a ccp reactor, the plasma is sustained by applying a sinusoidal electrostatic potential across a small gap filled with a low pressure gas typically 1 torr and in this case, the gas is argon.
Download fulltext pdf instabilities in a capacitively coupled oxygen plasma article pdf available in physics of plasmas 224. The gas pressure in the reactor can be lower than atmosphere or it can be atmospheric. Production of a periodic plasma structure by 400 khz. We proposed an altered configuration for dualfrequency df capacitively coupled plasmas ccp. In this configuration, two pairs of electrodes are arranged oppositely, and the discharging is perpendicularly driven by two rf sources. Chapter 3 inductively coupled plasmaatomic emission spectrometry. View enhanced pdf access article on wiley online library html view download pdf for offline. Investigation of etching optimization in capacitively. Oxygen and nitrogen capacitively coupled plasma ccp was used to irradiate mixtures of aliphatic acids in high boiling point solvents to synthesize fluorescent carbon dots cdots. Perkinelmer optima 8x00 icpoes performance that will change how you look at icpoes duration. The setup includes a plasma generation torch capacitively coupled, a gas supply module, and a multiaxis computer numerical control machine tool.
Plasma presentation free download as powerpoint presentation. Www the device consisted of two horizontal, parallel stainlesssteel electrodes. Biomass gasification using capacitively coupled rf plasma. Therefore, these modes in a capacitively coupled discharge consist of surface waves. Pdf rf capacitively coupled plasmas in n2h2 mixtures. A living electrode, which is covered with a periodically hollowed insulator, is powered from a 400 khz power supply through an impedance matching circuit. Capacitively coupled plasmas capacitively coupled plasmas have been used since 1975 for anisotropic reactive ion etching rie. In this work, the carbon contamination is removed from a large 340 mm. Plasma potential determination in rf capacitively coupled plasma by measuring electrode voltage. Experiments have been performed to examine the characteristics.
A dc magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which selfionized plasma sip sputtering and capacitively coupled plasma ccp sputtering are promoted, either together or alternately, in the same chamber. The temperatures and the electron where i is the corrected line intensity, k the transition wavelength, number densities possess their maximum value close to g the statistical weight of the lower level, f the oscillator strength the electrodes. Capacitively coupled radiofrequency discharges are still among the most powerful and flexible plasma. In a ccp reactor the plasma is generated between two. It essentially consists of two metal electrodes separated by a small distance, placed in a reactor. The operating principle of a capacitively coupled plasma is different when compared to the inductive case. Inductively coupled plasmaoptical emission spectrometry. Capacitively coupled plasma how is capacitively coupled plasma abbreviated. Electromagnetic effects in capacitively coupled plasmas. The capacitively coupled plasma ccp reactor is relatively straightforward and easy to scale up while allowing for uniform radical and ion fluxes at substrates with diameters of 300 mm and beyond. High plasma density and high spatial uniformity have a significant influence on plasma processing, and are therefore two.
The inductively coupled plasma source has mostly been. Comparison of plasma parameters in ccp and icp processes. In general, low capacitance input transistors are preferable, and systems where the total capacitance at the input is dominated by the detector capacitance are more efficient than systems that are capacitively. Voltage distribution over capacitively coupled plasma. A dc magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which selfionized plasma sip sputtering and capacitively coupled plasma ccp sputtering are promoted, either together or. Also, bottom coverage may be thinned or eliminated by inductivelycoupled plasma icp. Capacitively coupled plasmas gec reference cell sputtering hollow cathode discharges. Pdf characteristic temperatures and electron number. Space plasma, power and propulsion laboratory, research school of. A laboratoryscale capacitively coupled radio frequency rf plasma pyrolysis reactor working in reduced pressure has been developed. In capacitively coupled radio frequency rf discharges, as used in plasma processing of semiconductors, controlling the electron energy.
Capacitively coupled plasma used to simulate titans. For a commonly used cylindrical plasma chamber shown below, antenna is usually wrapped around the electrically insulating chamber wall. Control of ion energy and angular distributions in dual. These processes commonly utilize a capacitively coupled plasma ccp, in which the plasma is initiated and sustained by an oscillating electric field. Comparison of plasma parameters in ccp and icp processes appropriate for carbon nanotube growth yohei sakamoto, shuichi maeno 1, nobuteru tsubouchi 2 toshiro kasuya and motoi wada graduate school of engineering, doshisha university, kyotanabe, kyoto 6100321, japan 1 novelion systems, co. They both rely on the electric field created by voltage applied on the electrodes to accelerate freemoving electrons to knock out bonded electrons in neutrals. Inductively coupled plasmaoptical emission spectrometry icpoes is a powerful tool for the determination of metals in a variety of different sample matrices. When capacitively coupled plasma ccp is used to generate largearea plasma, the standing wave effect becomes significant, which results in the hindering of the uniform plasma process such as in a plasma etcher or plasma chemical vapor deposition. Introduction carbon nanotubes cnts discovered in 1991 by. Consequences on etch profiles yiting zhanga and mark j. Deposition of functional plasma polymers influenced by reactor geometry in capacitively coupled discharges. Deposition of functional plasma polymers influenced by.
Physics of highdensity radio frequency capacitively coupled. Twodimensional periodic plasma structure of a density above 1. Kushnerb department of electrical engineering and computer science, university of michigan, 1 beal ave. Following requirements of the plasma processing industry for increasing throughput, capacitively coupled plasma reactors with large. Ion bombardment during plasmaassisted atomic layer. The behavior of a single frequency capacitively coupled plasma ccp driven by. With this technique, liquid samples are injected into a radiofrequency rfinduced argon plasma using one of a variety of nebulizers or sample introduction techniques. Capacitively coupled plasmas microwave plasmas inductively coupled plasma streamer discharge ion energy and angular distributions key features 1d 2d 3d nonequilibrium plasma modeling fully parallelized simulations supports hybrid structuredunstructured meshes robust solvers for accelerated solutions on complex meshes. Ion bombardment during plasmaassisted atomic layer deposition. Of background interest is an rf diode which uses a capacitivelycoupled rf energy and in which a plasma is developed as discussed by h.
Pdf on nov 5, 2018, yasunori ohtsu and others published physics of highdensity radio frequency capacitively coupled. Pdf instabilities in a capacitively coupled oxygen plasma. Control of electron energy distributions and plasma characteristics of. Rf plasma, capacitively coupled plasma, plasma processing, hollow cathode.
Radiofrequency capacitively coupled plasmas in hydrogen. My thesis presentation on capacitively coupled plasma. Radiofrequency capacitively coupled plasmas in hydrogen excited by tailored voltage waveforms. Characterization of an asymmetric parallel plate radio. Plasma potential determination in rf capacitively coupled. Apr, 2018 the behavior of a single frequency capacitively coupled plasma ccp driven by. Computational study of capacitively coupled highpressure. A capacitively coupled plasma system, oxford instruments plasma 100 hereinafter referred to as oip 100, manufactured by oxford instruments, uk, was used.
Pdf on nov 5, 2018, yasunori ohtsu and others published physics of high density radio frequency capacitively coupled. These processes commonly utilize a capacitively coupled plasma ccp, in which the plasma is initiated and sustained by an oscillating electric field in a region between two or more electrodes. Investigation of etching optimization in capacitively coupled. Kinetic simulation of capacitively coupled plasmas driven. Pdf physics of highdensity radio frequency capacitively. Inductively coupled discharge also uses rf power supply like capacitively coupled discharge. Space plasma, power and propulsion laboratory, research school of physics and engineering, the australian national university, canberra, act. These methods will be useful to advance capacitively coupled plasma for microelectronic technology. Experimental investigation of a low pressure capacitively.
In general, low capacitance input transistors are preferable, and systems where the total capacitance at the input is dominated by the detector capacitance are more efficient than systems that are capacitively matched. Chapter 3 inductively coupled plasmaatomic emission. In capacitively coupled radio frequency rf discharges, as used in plasma processing of semiconductors, controlling the electron energy distribution, f. Control of dual frequency capacitively coupled plasma via.
According to the principle of dielectric barrier discharge dbd, a. Inductively coupled discharge plasma pie scientific. Aug 05, 2015 35 axial view plasma looks down the central channel of the plasma, this provides the best sensitivity and lowest detection limits axial design o environmental, o chemical. We use a radiofrequency rf capacitively coupled plasma discharge produced in different. This model benchmarks the capacitively coupled plasma physics interface against many different codes. Capacitively coupled plasma discharge of ionic liquid.
Twodimensional fluid simulation of an rf capacitively coupled ar. Trench and hole patterning with euv resists using dual frequency capacitively coupled plasma ccp. The capacitivelycoupled plasma ccp reactor is relatively straightforward and easy to scale up while allowing for uniform radical and ion fluxes at substrates with diameters of 300 mm and beyond. Characterization of fused silica surface topography in.
Frequency of the power is usually in tens of khz to tens of mhz range. Escampig xxi, viana do castelo, portugal, july 1014 2012. Plasma sources science and technology selfconsistent simulation of very high frequency capacitively coupled plasmas to cite this article. Dual frequency capacitively coupled plasma dfccp tools for etching and deposition for microelectronics fabrication typically use a high frequency hf, tens to hundreds of mhz to sustain the plasma and a low frequency lf, a few to 10 mhz for ion acceleration into the wafer. The deposition of functional plasma polymers such as a.
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